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1

High-resolution photoinduced transient spectroscopy of defect centers in vanadium-doped semi-insulating SiC

Paweł Kamiński, Roman Kozłowski, Marcin Miczuga, Michał Pawłowski, Michał Kozubal, Mariusz Pawłowski

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2008

Language:

english

File:

PDF, 296 KB

english, 2008

2

Enhanced spontaneous optical emission from inhomogeneous ensembles of quantum dots is induced by short-range coupling

Kozub, Michał, Pawicki, Łukasz, Machnikowski, Paweł

Journal:

Physical Review B

Year:

2012

Language:

english

File:

PDF, 180 KB

english, 2012

3

Deep-Level Defects in Electron Irradiated 6H-SiC

Kozubal, Michal Sebastian, Kaminski, Pawel, Warchol, Stanislaw, Racka-Dzietko, Katarzyna, Grasza, Krzysztof, Tymicki, Emil

Journal:

MRS Proceedings

Year:

2010

Language:

english

File:

PDF, 118 KB

english, 2010

4

Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside

Racka-Dzietko, Katarzyna, Tymicki, Emil, Raczkiewicz, M., Grasza, Krzysztof, Kozubal, Michal, Jurkiewicz-Wegner, Elzbieta, Jakieła, Rafał, Brzozowski, Andrzej, Pawłowski, Mariusz, Piersa, Miroslaw, Sa

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 2.45 MB

english, 2009

5

Characterization of Vanadium Doped 4H- and 6H-SiC Grown by PVT Method Using the Open Seed Backside

Racka-Dzietko, Katarzyna, Tymicki, Emil, Grasza, Krzysztof, Raczkiewicz, Marcin, Jakieła, Rafał, Kozubal, Michal, Jurkiewicz-Wegner, Elzbieta, Brzozowski, Andrzej, Diduszko, Ryszard, Piersa, Miroslaw,

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 473 KB

english, 2010

6

Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al

Taube, Andrzej, Kamińska, Eliana, Kozubal, Maciej, Kaczmarski, Jakub, Wojtasiak, Wojciech, Jasiński, Jakub, Borysiewicz, Michał A., Ekielski, Marek, Juchniewicz, Marcin, Grochowski, Jakub, Myśliwiec,

Journal:

physica status solidi (a)

Year:

2015

Language:

english

File:

PDF, 2.17 MB

english, 2015

7

Reflection Layer Mediated Enhancement of Terahertz Radiation Utilizing Heavily-Doped InAs Thin Films

Kozub, Michał, Nishisaka, Kazuichi, Maemoto, Toshihiko, Sasa, Shigehiko, Takayama, Kazuhisa, Tonouchi, Masayoshi

Journal:

Journal of Infrared, Millimeter and Terahertz Waves

Year:

2015

Language:

english

File:

PDF, 496 KB

english, 2015

8

Deep-Level Defects in Nitrogen-Doped 6H-SiC Grown by PVT Method

Kaminski, Pawel, Kozubal, Michal, Grasza, Krzysztof, Tymicki, Emil

Journal:

MRS Proceedings

Year:

2008

Language:

english

File:

PDF, 165 KB

english, 2008

9

High-resolution Photoinduced Transient Spectroscopy of Defect Centers in Undoped Semi-Insulating 6H-SiC

Kaminski, Pawel, Kozlowski, Roman, Miczuga, Marcin, Pawlowski, Michal, Kozubal, Michal, Zelazko, Jaroslaw

Journal:

MRS Proceedings

Year:

2008

Language:

english

File:

PDF, 1.57 MB

english, 2008

10

Growth-Temperature Dependence of Wetting Layer Formation in High Density InGaAs/GaAs Quantum Dot Structures Grown by Droplet Epitaxy

Zuerbig, Verena, Bugaew, Natalia, Reithmaier, Johann Peter, Kozub, Michał, Musiał, Anna, Sęk, Grzegorz, Misiewicz, Jan

Journal:

Japanese Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 365 KB

english, 2012

11

High resistivity isolation for AlGaN/GaN HEMT using Al double-implantation

Taube, Andrzej, Kozubal, Maciej, Kaczmarski, Jakub, Juchniewicz, Marcin, Barcz, Adam, Dyczewski, Jan, Jakieła, Rafał, Dynowska, Elżbieta, Borysiewicz, Michał Adam, Prystawko, Paweł, Jasiński, Jakub, B

Journal:

MRS Proceedings

Year:

2014

Language:

english

File:

PDF, 5.58 MB

english, 2014

12

Effect of Nitrogen-Doping on the Properties of Radiation Defect Centers in FZ Silicon

Kamiński, P., Kozłowski, R., Surma, Barbara, Kozubal, Michal, Hindrichsen, Christian, Sveigaard, Theis, Jensen, Leif, Kwestarz, Michal, Jabłoński, J.

Journal:

Solid State Phenomena

Year:

2015

Language:

english

File:

PDF, 540 KB

english, 2015

13

Non-destructive carrier concentration determination in InAs thin films for THz radiation generating devices using fast differential reflectance spectroscopy

Kozub, Michał A., Motyka, Marcin, Dyksik, Mateusz, Sęk, Grzegorz, Misiewicz, Jan, Nishisaka, Kazuichi, Maemoto, Toshihiko, Sasa, Shigehiko

Journal:

Optical and Quantum Electronics

Year:

2016

Language:

english

File:

PDF, 834 KB

english, 2016

14

Flexible IGZO Schottky Diodes on Paper

Kaczmarski, Jakub, Borysiewicz, Michał A., Piskorski, Krzysztof, Wzorek, Marek, Kozubal, Maciej Artur, Kaminska, Eliana

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 2.85 MB

english, 2017

15

Thermally activated double-carrier transport in epitaxial graphene on vanadium-compensated 6H-SiC as revealed by Hall effect measurements

Ciuk, Tymoteusz, Kozlowski, Andrzej, Michalowski, Pawel Piotr, Kaszub, Wawrzyniec, Kozubal, Michal, Rekuc, Zbigniew, Podgorski, Jaroslaw, Stanczyk, Beata, Przyborowska, Krystyna, Jozwik, Iwona, Kowali

Journal:

Year:

2018

Language:

english

File:

PDF, 1.61 MB

english, 2018

16

High-Temperature Hall Effect Sensor Based on Epitaxial Graphene on High-Purity Semiinsulating 4H-SiC

Ciuk, Tymoteusz, Stanczyk, Beata, Przyborowska, Krystyna, Czolak, Dariusz, Dobrowolski, Artur, Jagiello, Jakub, Kaszub, Wawrzyniec, Kozubal, Michal, Kozlowski, Roman, Kaminski, Pawel

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 683 KB

english, 2019